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| ADVANCED INFORMATION ADVANCED INFORMATION 2N4403 SMALL SIGNAL TRANSISTORS (PNP) TO-92 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) FEATURES PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the NPN transistor 2N4401 is recommended. On special request, this transistor is also manufactured in the pin configuration TO-18. This transistor is also available in the SOT-23 case with the type designation MMBT4403. max. AE 0.022 (0.55) 0.098 (2.5) E C B MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND THERMAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation at TA = 25C Derate above 25C Power Dissipation at TC = 25C Derate above 25C Thermal Resistance Junction to Ambient Air Thermal Resistance Junction to Case Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot 40 40 5.0 600 625 5.0 1.5 12 200 83.3 150 55 to +150 Volts Volts Volts mA mW mW/C W mW/C C/W C/W C C Ptot RQJA RQJC Tj TS 2/17/99 2N4403 ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL MIN. .MAX. UNIT Collector-Base Breakdown Voltage at IC = 0.1 mA, IE = 0 Collector-Emitter Breakdown Voltage(1) at IC = 1 mA, IB = 0 Emitter-Base Breakdown Voltage at IE = 0.1 mA, IC = 0 Collector-Emitter Saturation Voltage(1) at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Base-Emitter Saturation Voltage(1) at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Collector Cutoff Current at VEB = 0.4 V, VCE = 35 V Base Cutoff Current at VEB = 0.4 V, VCE = 35 V DC Current Gain at VCE = 1 V, IC = 0.1 mA at VCE = 1 V, IC = 1 mA at VCE = 1 V, IC = 10 mA at VCE = 2 V, IC = 150 mA(1) at VCE = 2 V, IC = 500 mA(1) Input Impedance at VCE = 10 V, IC = 1 mA, f = 1 kHZ Voltage Feedback Ratio at VCE = 10 V, IC = 1 mA, f = 1 kHZ Current Gain-Bandwidth Product at VCE = 10 V, IC = 20 mA, f = 100 MHZ Collector-Base Capacitance at VCB = 10 V, IE=0, f = 1.0 MHZ Emitter-Base Capacitance at VEB = 0.5 V, IC=0, f = 1.0 MHZ NOTES (1) Pulse test: Pulse width 300ms - Duty cycle 2% V(BR)CBO 40 Volts V(BR)CEO V(BR)EBO 40 5.0 Volts Volts VCEsat VCEsat 0.40 0.75 Volts Volts VBEsat VBEsat ICEX IBEV 0.75 0.95 1.30 100 100 Volts Volts nA nA hFE hFE hFE hFE hFE hie 30 60 100 100 20 1.5 4 300 15 4 kW hre fT CCB CEB 0.1 a 10 200 8 a 10 8.5 30 MHz pF pF 2N4403 ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Small Signal Current Gain at VCE = 10 V, IC = 1 mA, f = 1 kHz Output Admittance at VCE = 10 V, IC = 1 mA, f = 1 kHz Delay Time (see Fig. 1) at IB1 = 15 mA, IC = 150 mA, VCC = 30V, VEB = 2V Rise Time (see Fig. 1) at IB1 = 15 mA, IC = 150 mA, VCC = 30V, VEB = 2V Storage Time (see Fig. 2) at IB1 = IB2 = 15 mA, IC = 150 mA, VCC = 30V Fall Time (see Fig. 2) at IB1 = IB2 = 15 mA, IC = 150 mA, VCC = 30V, hfe 60 500 mS ns hoe 1.0 100 td 15 tr 20 ns ts 225 ns tf 30 ns SWITCHING TIME EQUIVALENT TEST CIRCUIT FIGURE 1 - TURN-ON TIME FIGURE 2 - TURN-OFF TIME -30V < 2 ns +2 V 0 1kW -16 V 1.0 to 100ms Duty Cycle - 2% +4 V Scope rise time - 4ns *Total shunt capacitance of test jig, connectors and oscilloscope C S* < 10 pF -16 V 1.0 to 100ms Duty Cycle - 2% +4 V 200W +14 V 0 1kW < 20 ns -30V 200W C S* < 10 pF |
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